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SIC碳化硅MOS
- G1M12080E 碳化硅MOS 1200V/40A Silicon Carbide Power MOSFET
- G1M12080E 碳化硅MOS 1200V/40A Silicon Carbide Power MOSFET
High Blocking Voltage with Low O-Resistance
High Speed Switching with Low Capactiances
Easy to parallel and simple to drive
Avanche Ruggedness
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